PART |
Description |
Maker |
MMBF2202PT1G MMBF2202PT106 MMBF2202PT1 |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
MGSF1N02LT105 MGSF1N02LT3G MGSF1N02LT1 MGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ONSEMI[ON Semiconductor]
|
SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
|
Leshan Radio Company
|
|